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inchange semiconductor isc product specification isc silicon npn power transistors BU113 description collector-emitter voltage- :v cex(sus) = 700v(min.) collector current- i c = 10a applications designed for use in horizontal deflection output state of color tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-emitter voltage 700 v v cex collector-emitter voltage v be = -5v 700 v v ebo emitter-base voltage 10 v i c collector current-continuous 10 a i b b base current-continuous 4 a p c collector power dissipation @t c = 90 30 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.0 /w isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/
inchange semiconductor isc product specification isc silicon npn power transistors BU113 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo collector-base breakdown voltage i e = 30ma; i c = 0 10 v v ce (sat) collector-emitter saturation voltage i c = 10a; i b = 2a 3.0 v i cex collector cutoff current v ce = 250v; v be = -5v v ce = 700v; v be = -5v 2.0 10 ma h fe dc current gain i c = 8a; v ce = 2v 7 f t current-gain?bandwidth product i c = 0.5a; v ce = 4v 6 mhz c ob collector output capacitance i e = 0; v cb = 10v; f= 1mhz 250 pf t f fall time i c = 8a; i b1 = -i b2 = 1.6a 1.0 s isc website www.iscsemi.cn www.datasheet.co.kr datasheet pdf - http://www..net/ |
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